最近の成果: 高速イオンと表面の相互作用の解明

 

  1. ★30 keVのC60+イオンの注入飛程にクラスター効果を見いだした．

    1. ➡30 keVのC60+イオンの方が，0.5 keVの C+イオンよりも深く侵入する．


Fig. 1. Carbon depth profiles for 30 keV C60+ (●) and 0.5 keV C+ (○) implantations. Depth profiles of As before (▲) and after (▵) the implantation of 30 keV C60+ are also shown. The solid line shows the estimated As profile after the C60+ implantation when radiation-induced diffusion does not take place.


  1. 1)Y. Morita, K. Nakajima, M. Suzuki, K. Narumi, Y. Saitoh, W. Vandervorst, and K. Kimura, "Cluster effect on projected range of 30keV in silicon," Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (2011).